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| Freescale Semiconductor Technical Data Document Number: MMG3006NT1 Rev. 2, 3/2008 Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3006NT1 is a General Purpose Amplifier that is internally input prematched and designed for a broad range of Class A, small - signal, high linearity, general purpose applications. It is suitable for applications with frequencies from 400 to 2400 MHz such as Cellular, PCS, WLL, PHS, VHF, UHF, UMTS and general small - signal RF. Features * Frequency: 400 - 2400 MHz * P1dB: 33 dBm @ 900 MHz * Small - Signal Gain: 17.5 dB @ 900 MHz * Third Order Output Intercept Point: 49 dBm @ 900 MHz * Single 5 Volt Supply * Internally Input Prematched to 50 Ohms * RoHS Compliant * In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 13 inch Reel. MMG3006NT1 400 - 2400 MHz, 17.5 dB 33 dBm InGaP HBT CASE 1898 - 01 QFN 4x4 PLASTIC Table 1. Typical Performance (1) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @1dB Compression Third Order Output Intercept Point Symbol Gp IRL ORL P1db IP3 900 MHz 17.5 -8 - 13 33 49 1960 MHz 14 -9 - 14 33 49 2140 MHz 14 - 12 - 18 33 49 Unit dB dB dB dBm dBm Table 2. Maximum Ratings Rating Supply Voltage Supply Current RF Input Power Storage Temperature Range Junction Temperature (2) Symbol VDC IDC Pin Tstg TJ Value 6 1400 28 - 65 to +150 150 Unit V mA dBm C C 2. For reliable operation, the junction temperature should not exceed 150C. 1. VDC = 5 Vdc, TC = 25C, 50 ohm system Table 3. Thermal Characteristics (VDC = 5 Vdc, IDC = 850 mA, TC = 25C) Characteristic Thermal Resistance, Junction to Case Symbol RJC Value (3) 7.8 Unit C/W 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. (c) Freescale Semiconductor, Inc., 2008. All rights reserved. MMG3006NT1 1 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (VDC = 5 Vdc, 900 MHz, TC = 25C, 50 ohm system, in Freescale Application Circuit) Characteristic Small - Signal Gain (S21) Input Return Loss (S11) Output Return Loss (S22) Power Output @ 1dB Compression Third Order Output Intercept Point Noise Figure Supply Current (1) Supply Voltage (1) Symbol Gp IRL ORL P1dB IP3 NF IDC VDC Min 16.5 -- -- -- -- -- 760 -- Typ 17.5 -8 - 13 33 49 6.6 850 5 Max -- -- -- -- -- -- 960 -- Unit dB dB dB dBm dBm dB mA V 1. For reliable operation, the junction temperature should not exceed 150C. MMG3006NT1 2 RF Device Data Freescale Semiconductor Table 5. Functional Pin Description Name VBA RFin RFout/ VCC VCC GND Pin Number 1 2, 3, 4 9, 10, 11, 12 16 Backside Center Metal Bias voltage supply. RF input for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. RF output for the power amplifier. This pin is DC - coupled and requires a DC - blocking series capacitor. Collector voltage supply. The center metal base of the QFN package provides both DC and RF ground as well as heat sink contact for the power amplifier. VBA 1 RFin 2 RFin 3 RFin 4 5 6 7 8 Description VCC 16 15 14 13 12 RFout/VCC 11 RFout/VCC 10 RFout/VCC 9 RFout/VCC (Top View) Figure 1. Pin Connections Table 6. ESD Protection Characteristics Test Conditions/Test Methodology Human Body Model (per JESD 22 - A114) Machine Model (per EIA/JESD 22 - A115) Charge Device Model (per JESD 22 - C101) Class 1C (Minimum) A (Minimum) IV (Minimum) Table 7. Moisture Sensitivity Level Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 1 Package Peak Temperature 260 Unit C MMG3006NT1 RF Device Data Freescale Semiconductor 3 50 OHM TYPICAL CHARACTERISTICS 1600 1400 ICC, COLLECTOR CURRENT (mA) 1200 1000 800 600 400 200 0 0 1 2 3 VBA, BIAS VOLTAGE (V) VCC = 5 Vdc 103 120 125 130 135 140 145 150 TJ, JUNCTION TEMPERATURE (C) NOTE: The MTTF is calculated with VDC = 5 Vdc, IDC = 850 mA MTTF (YEARS) 105 106 104 Figure 2. Collector Current versus Bias Voltage Figure 3. MTTF versus Junction Temperature MMG3006NT1 4 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 900 MHz VSUPPLY R3 R1 R2 C3 RF INPUT C4 1 16 15 14 13 12 11 10 Z6 L1 Z7 Z8 C5 C6 C7 RF OUTPUT Current Mirror Z1 C1 Z2 Z3 Z4 Z5 2 3 DUT Z9 C2 C10 Z10 Z11 C8 C9 4 5 6 7 8 9 C11 Z1 Z2, Z9, Z10 Z3 Z4 Z5 0.140 x 0.028 Microstrip 0.044 x 0.028 Microstrip 0.169 x 0.028 Microstrip 0.177 x 0.028 Microstrip 0.026 x 0.053 Microstrip Z6 Z7 Z8 Z11 PCB 0.026 x 0.089 Microstrip 0.167 x 0.028 Microstrip 0.178 x 0.028 Microstrip 0.096 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 4. 50 Ohm Test Circuit Schematic Table 8. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3, C6 C4, C7 C5 C8 C9, C11 C10 L1 R1 R2, R3 Description 15 pF Chip Capacitors 0.01 F Chip Capacitors 0.1 F Chip Capacitors 2.2 F Chip Capacitor 6.8 pF Chip Capacitor 3.9 pF Chip Capacitors 5.6 pF Chip Capacitor 15 nH Chip Inductor 100 , 1/4 W Chip Resistor 0 , 1/10 W Chip Resistors Part Number ECUV1H150JCV C0603C103J5RAC C0603C104J5RAC T491A225K016AT 06035J6R8BS 06035J3R9BS 06035J5R6BS 1008CS - 150XJB ERJ8GEYJ101V CRCW06030000FKEA Manufacturer Panasonic Kemet Kemet Kemet AVX AVX AVX Coilcraft Panasonic Vishay MMG3006NT1 RF Device Data Freescale Semiconductor 5 50 OHM APPLICATION CIRCUIT: 900 MHz VBA VSUPPLY C5 C3 C4 C6 R1 C7 R2 R3 RFin L1 RFout C2 C1 C8 C9 C10 C11 MMG3006N Rev 4 Figure 5. 50 Ohm Test Circuit Component Layout MMG3006NT1 6 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 900 MHz 20 Gp, SMALL-SIGNAL GAIN (dB) -5 18 IRL, INPUT RETURN LOSS (dB) TC = -40C 85C 25C -6 TC = -40C -7 85C -8 25C 16 14 12 VDC = 5 Vdc 10 840 870 900 f, FREQUENCY (MHz) 930 960 -9 VDC = 5 Vdc -10 840 870 900 f, FREQUENCY (MHz) 930 960 Figure 6. Small - Signal Gain (S21) versus Frequency Figure 7. Input Return Loss (S11) versus Frequency -5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 40 -10 TC = -40C 35 85C -15 85C -20 VDC = 5 Vdc -25 840 25C 30 25C TC = -40C 25 VDC = 5 Vdc 20 840 870 900 f, FREQUENCY (MHz) 930 960 870 900 f, FREQUENCY (MHz) 930 960 Figure 8. Output Return Loss (S22) versus Frequency IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 52 TC = -40C 10 Figure 9. P1dB versus Frequency 50 25C NF, NOISE FIGURE (dB) 8 TC = 85C 6 -40C 25C 4 48 85C 46 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 840 870 900 f, FREQUENCY (MHz) 930 960 2 VDC = 5 Vdc 0 840 870 900 f, FREQUENCY (MHz) 930 960 Figure 10. Third Order Output Intercept Point versus Frequency Figure 11. Noise Figure versus Frequency MMG3006NT1 RF Device Data Freescale Semiconductor 7 50 OHM TYPICAL CHARACTERISTICS: 900 MHz -25 -30 -35 -40 TC = -40C -45 -50 85C -55 24 26 28 Pout, OUTPUT POWER (dBm) 30 32 VDC = 5 Vdc, f = 900 MHz Single-Carrier IS-95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 -35 -40 -45 TC = -40C -50 -55 -60 24 25C 85C VDC = 5 Vdc, f = 900 MHz Single-Carrier IS-95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth 25C 26 28 Pout, OUTPUT POWER (dBm) 30 32 Figure 12. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 13. IS - 95 Adjacent Channel Power Ratio versus Output Power MMG3006NT1 8 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 1960 MHz VSUPPLY R1 R2 R3 C3 RF INPUT C4 1 16 15 14 13 12 11 10 Z6 Z7 Z8 Z9 C5 L1 Z10 C2 C10 C11 C6 C7 RF OUTPUT Current Mirror Z1 C1 Z2 Z3 Z4 Z5 2 3 DUT Z11 C8 C9 4 5 6 7 8 Z7 Z8 Z9 Z10 PCB 9 Z1, Z11 Z2 Z3 Z4 Z5 Z6 0.140 x 0.028 Microstrip 0.268 x 0.028 Microstrip 0.084 x 0.028 Microstrip 0.038 x 0.028 Microstrip 0.026 x 0.053 Microstrip 0.026 x 0.089 Microstrip 0.041 x 0.028 Microstrip 0.093 x 0.028 Microstrip 0.033 x 0.028 Microstrip 0.222 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 14. 50 Ohm Test Circuit Schematic Table 9. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3, C6 C4, C7 C5 C8, C9 C10 C11 L1 R1 R2, R3 Description 15 pF Chip Capacitors 0.01 F Chip Capacitors 0.1 F Chip Capacitors 2.2 F Chip Capacitor 3.0 pF Chip Capacitors 2.0 pF Chip Capacitor 2.7 pF Chip Capacitor 15 nH Chip Inductor 100 , 1/4 W Chip Resistor 0 , 1/10 W Chip Resistors Part Number ECUV1H150JCV C0603C103J5RAC C0603C104J5RAC T491A225K016AT 06035J3R0BS 06035J2R0BS 06035J2R7BS 1008CS - 150XJB ERJ8GEYJ101V CRCW06030000FKEA Manufacturer Panasonic Kemet Kemet Kemet AVX AVX AVX Coilcraft Panasonic Vishay MMG3006NT1 RF Device Data Freescale Semiconductor 9 50 OHM APPLICATION CIRCUIT: 1960 MHz VBA VSUPPLY C5 C3 C4 C6 R1 C7 R2 R3 RFin L1 RFout C2 C1 C8 C9 C10 C11 MMG3006N Rev 4 Figure 15. 50 Ohm Test Circuit Component Layout MMG3006NT1 10 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 1960 MHz 18 Gp, SMALL-SIGNAL GAIN (dB) -6 16 TC = -40C 85C 12 25C IRL, INPUT RETURN LOSS (dB) -7 TC = -40C 25C -9 85C 14 -8 10 VDC = 5 Vdc 8 1900 1930 1960 f, FREQUENCY (MHz) 1990 2020 -10 VDC = 5 Vdc -11 1900 1930 1960 f, FREQUENCY (MHz) 1990 2020 Figure 16. Small - Signal Gain (S21) versus Frequency Figure 17. Input Return Loss (S11) versus Frequency -5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 40 85C -10 TC = -40C -15 85C 25C -20 VDC = 5 Vdc -25 1900 1930 1960 f, FREQUENCY (MHz) 1990 2020 35 25C TC = -40C 30 25 VDC = 5 Vdc 20 1900 1930 1960 f, FREQUENCY (MHz) 1990 2020 Figure 18. Output Return Loss (S22) versus Frequency IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 52 10 TC = -40C 25C 48 85C 46 NF, NOISE FIGURE (dB) Figure 19. P1dB versus Frequency 50 8 TC = 85C 6 4 -40C 25C 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 1900 1930 1960 f, FREQUENCY (MHz) 1990 2020 2 VDC = 5 Vdc 0 1900 1930 1960 f, FREQUENCY (MHz) 1990 2020 Figure 20. Third Order Output Intercept Point versus Frequency Figure 21. Noise Figure versus Frequency MMG3006NT1 RF Device Data Freescale Semiconductor 11 50 OHM TYPICAL CHARACTERISTICS: 1960 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 VDC = 5 Vdc, f = 1960 MHz Single-Carrier IS-95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 -35 -40 -45 -50 -55 -60 25C -65 -70 20 TC = -40C 85C VDC = 5 Vdc, f = 1960 MHz Single-Carrier IS-95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth -35 -40 -45 TC = -40C -50 85C -55 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) 25C 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Figure 22. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 23. IS - 95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 -35 -40 -45 TC = -40C -50 -55 85C -60 -65 20 25C VDC = 5 Vdc, f = 1960 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) 22 24 Pout, OUTPUT POWER (dBm) 26 28 Figure 24. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3006NT1 12 RF Device Data Freescale Semiconductor 50 OHM APPLICATION CIRCUIT: 2140 MHz VSUPPLY R1 R2 R3 C3 RF INPUT C4 1 16 15 14 13 12 11 10 Z6 Z7 Z8 C5 L1 Z9 C2 C10 C6 C7 RF OUTPUT Current Mirror Z1 Z2 C1 C8 Z3 Z4 Z5 2 3 DUT Z10 C9 4 5 6 7 8 Z7 Z8 Z9 Z10 PCB 9 Z1 Z2 Z3 Z4 Z5 Z6 0.096 x 0.028 Microstrip 0.044 x 0.028 Microstrip 0.352 x 0.028 Microstrip 0.038 x 0.028 Microstrip 0.026 x 0.053 Microstrip 0.026 x 0.089 Microstrip 0.074 x 0.028 Microstrip 0.093 x 0.028 Microstrip 0.222 x 0.028 Microstrip 0.140 x 0.028 Microstrip Isola FR408, 0.014, r = 3.7 Figure 25. 50 Ohm Test Circuit Schematic Table 10. 50 Ohm Test Circuit Component Designations and Values Part C1, C2 C3, C6 C4, C7 C5 C8 C9 C10 L1 R1 R2, R3 Description 15 pF Chip Capacitors 0.01 F Chip Capacitors 0.1 F Chip Capacitors 2.2 F Chip Capacitor 0.5 pF Chip Capacitor 3.6 pF Chip Capacitor 3.9 pF Chip Capacitor 15 nH Chip Inductor 100 , 1/4 W Chip Resistor 0 , 1/10 W Chip Resistors Part Number ECUV1H150JCV C0603C103J5RAC C0603C104J5RAC T491A225K016AT 06035J0R5BS 06035J3R6BS 06035J3R9BS 1008CS - 150XJB ERJ8GEYJ101V CRCW06030000FKEA Manufacturer Panasonic Kemet Kemet Kemet AVX AVX AVX Coilcraft Panasonic Vishay MMG3006NT1 RF Device Data Freescale Semiconductor 13 50 OHM APPLICATION CIRCUIT: 2140 MHz VBA VSUPPLY C5 C3 C4 C6 R1 C7 R2 R3 RFin C1 C8 C9 L1 RFout C2 C10 MMG3006N Rev 4 Figure 26. 50 Ohm Test Circuit Component Layout MMG3006NT1 14 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz 18 Gp, SMALL-SIGNAL GAIN (dB) -15 TC = -40C -20 25C -25 85C -30 VDC = 5 Vdc 2200 -35 2080 2110 2140 f, FREQUENCY (MHz) 2170 2200 16 TC = -40C 14 85C 12 25C 10 VDC = 5 Vdc 8 2080 2110 2140 f, FREQUENCY (MHz) 2170 Figure 27. Small - Signal Gain (S21) versus Frequency IRL, INPUT RETURN LOSS (dB) Figure 28. Input Return Loss (S11) versus Frequency -5 P1dB, 1 dB COMPRESSION POINT (dBm) ORL, OUTPUT RETURN LOSS (dB) 40 TC = -40C 35 -10 TC = -40C -15 85C 25C -20 VDC = 5 Vdc -25 2080 2110 2140 f, FREQUENCY (MHz) 2170 2200 30 85C 25 25C VDC = 5 Vdc 20 2080 2110 2140 f, FREQUENCY (MHz) 2170 2200 Figure 29. Output Return Loss (S22) versus Frequency IP3, THIRD ORDER OUTPUT INTERCEPT POINT (dBm) 52 TC = -40C NF, NOISE FIGURE (dB) 25C 48 85C 46 10 Figure 30. P1dB versus Frequency 50 8 TC = 85C 6 25C 4 -40C 44 VDC = 5 Vdc 1 MHz Tone Spacing 42 2080 2110 2140 f, FREQUENCY (MHz) 2170 2200 2 VDC = 5 Vdc 0 2080 2110 2140 f, FREQUENCY (MHz) 2170 2200 Figure 31. Third Order Output Intercept Point versus Frequency Figure 32. Noise Figure versus Frequency MMG3006NT1 RF Device Data Freescale Semiconductor 15 50 OHM TYPICAL CHARACTERISTICS: 2140 MHz ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 VDC = 5 Vdc, f = 2140 MHz Single-Carrier IS-95, 9 Channel Forward 750 kHz Measurement Offset 30 kHz Measurement Bandwidth 25C -45 85C -50 TC = -40C -55 22 24 26 28 30 32 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 -35 -40 -45 -50 -55 -60 -65 -70 20 TC = -40C 25C 85C VDC = 5 Vdc, f = 2140 MHz Single-Carrier IS-95, 9 Channel Forward 885 kHz Measurement Offset 30 kHz Measurement Bandwidth -35 -40 22 24 26 28 30 32 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm) Figure 33. IS - 95 Adjacent Channel Power Ratio versus Output Power Figure 34. IS - 95 Adjacent Channel Power Ratio versus Output Power ACPR, ADJACENT CHANNEL POWER RATIO (dBc) -30 -35 -40 25C -45 TC = -40C -50 -55 -60 -65 20 22 24 Pout, OUTPUT POWER (dBm) 26 28 85C VDC = 5 Vdc, f = 2140 MHz Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 8.5 dB @ 0.01% Probability (CCDF) Figure 35. Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power MMG3006NT1 16 RF Device Data Freescale Semiconductor 50 OHM TYPICAL CHARACTERISTICS Table 11. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 850 mA, TC = 255C, 50 Ohm System) f MHz 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 2050 2100 2150 2200 2250 2300 2350 S11 |S11| 0.821 0.841 0.860 0.872 0.889 0.900 0.909 0.917 0.924 0.930 0.935 0.939 0.943 0.946 0.949 0.951 0.953 0.954 0.956 0.957 0.958 0.958 0.958 0.959 0.958 0.957 0.957 0.955 0.954 0.951 0.949 0.945 0.942 0.937 0.932 0.925 0.918 0.910 0.904 0.900 0.902 0.910 0.924 - 173.7 - 174.5 - 175.2 - 175.3 - 176.1 - 177.0 - 177.9 - 178.8 - 179.6 179.6 178.9 178.2 177.5 176.9 176.3 175.7 175.2 174.6 174.1 173.6 173.1 172.6 172.2 171.7 171.3 170.9 170.5 170.0 169.7 169.2 168.8 168.4 168.1 167.7 167.3 166.9 166.4 166.0 165.6 165.2 164.9 164.4 164.1 |S21| 2.816 2.643 2.471 2.309 2.149 2.030 1.908 1.796 1.695 1.605 1.522 1.448 1.380 1.320 1.266 1.216 1.172 1.133 1.098 1.067 1.039 1.015 0.994 0.978 0.964 0.952 0.945 0.941 0.941 0.944 0.951 0.969 0.975 0.985 0.999 1.016 1.034 1.048 1.053 1.038 0.995 0.922 0.823 S21 143.3 137.3 132.0 127.6 124.2 120.3 116.9 113.8 110.8 108.2 105.8 103.4 101.3 99.2 97.2 95.2 93.4 91.5 89.7 87.8 86.0 84.3 82.4 80.5 78.5 76.5 74.3 72.0 69.6 67.0 64.1 60.9 57.4 53.5 49.0 43.7 37.5 30.2 21.7 11.9 1.2 - 10.0 - 20.9 |S12| 0.00597 0.00514 0.00455 0.00435 0.00371 0.00331 0.00306 0.00286 0.00269 0.00258 0.00248 0.00243 0.00240 0.00239 0.00239 0.00242 0.00246 0.00250 0.00255 0.00261 0.00268 0.00275 0.00282 0.00292 0.00299 0.00306 0.00316 0.00324 0.00332 0.00340 0.00348 0.00360 0.00361 0.00364 0.00363 0.00357 0.00346 0.00322 0.00290 0.00242 0.00178 0.00104 0.000474 S12 - 61.7 - 56.7 - 51.6 - 44.2 - 46.7 - 40.6 - 35.3 - 30.6 - 25.9 - 20.7 - 15.9 - 11.1 - 6.6 - 2.2 1.8 5.4 8.8 11.9 14.1 16.7 18.6 19.9 21.4 22.6 23.5 23.9 24.2 24.3 23.7 23.3 22.3 21.0 19.4 16.9 14.0 9.9 5.4 - 0.4 - 6.9 - 13.5 - 19.1 - 18.2 24.3 |S22| 0.922 0.922 0.922 0.921 0.924 0.924 0.925 0.925 0.924 0.923 0.922 0.921 0.920 0.919 0.918 0.918 0.918 0.917 0.917 0.916 0.915 0.915 0.914 0.913 0.913 0.912 0.912 0.911 0.910 0.909 0.907 0.906 0.905 0.903 0.902 0.901 0.902 0.903 0.905 0.910 0.916 0.925 0.933 S22 - 179.0 - 178.9 - 179.1 - 180.0 - 179.4 - 179.6 - 179.4 - 179.4 - 179.6 - 179.5 - 179.6 - 179.8 - 179.9 180.0 179.9 179.6 179.5 179.3 179.0 178.8 178.6 178.3 177.9 177.6 177.3 177.1 176.7 176.5 176.2 175.8 175.5 175.2 175.0 174.6 174.4 174.1 173.8 173.4 173.2 172.9 172.5 172.2 171.9 (continued) MMG3006NT1 RF Device Data Freescale Semiconductor 17 50 OHM TYPICAL CHARACTERISTICS Table 11. Common Emitter S - Parameters (VDC = 5 Vdc, IDC = 850 mA, TC = 255C, 50 Ohm System) (continued) f MHz 2400 2450 2500 2550 2600 2650 2700 2750 2800 2850 2900 2950 3000 S11 |S11| 0.938 0.952 0.963 0.970 0.976 0.981 0.983 0.986 0.988 0.988 0.989 0.990 0.990 163.7 163.3 162.9 162.5 162.1 161.6 161.2 160.8 160.5 160.0 159.6 159.2 158.8 |S21| 0.711 0.600 0.498 0.408 0.332 0.268 0.215 0.170 0.132 0.101 0.075 0.053 0.037 S21 - 30.9 - 39.7 - 47.0 - 53.1 - 58.0 - 61.9 - 64.8 - 66.7 - 67.6 - 66.9 - 64.1 - 57.4 - 43.3 |S12| 0.000864 0.00152 0.00207 0.00253 0.00287 0.00316 0.00340 0.00361 0.00382 0.00402 0.00418 0.00438 0.00455 S12 82.0 86.3 84.0 80.0 76.4 73.4 71.2 69.2 67.5 66.1 64.8 63.4 62.3 |S22| 0.938 0.943 0.945 0.946 0.947 0.945 0.944 0.943 0.941 0.940 0.939 0.938 0.937 S22 171.7 171.4 171.1 170.8 170.4 169.0 168.3 167.4 166.5 165.9 165.1 164.5 163.9 MMG3006NT1 18 RF Device Data Freescale Semiconductor 0.65 0.40 3.00 0.65 4.30 2.5 x 2.5 Solder Pad with Thermal Via Structure All Dimensions in mm NOTES: 1. THERMAL AND RF GROUNDING CONSIDERATIONS SHOULD BE USED IN PCB LAYOUT DESIGN. 2. DEPENDING ON PCB DESIGN RULES, AS MANY VIAS AS POSSIBLE SHOULD BE PLACED ON THE BACKSIDE CENTER METAL GROUND LANDING PATTERN. 3. REFER TO FREESCALE APPLICATION NOTE AN2467 FOR ADDITIONAL PQFN PCB GUIDELINES. Figure 36. Recommended Mounting Configuration MMG3006NT1 RF Device Data Freescale Semiconductor 19 PACKAGE DIMENSIONS MMG3006NT1 20 RF Device Data Freescale Semiconductor MMG3006NT1 RF Device Data Freescale Semiconductor 21 MMG3006NT1 22 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers * AN3100: General Purpose Amplifier Biasing REVISION HISTORY The following table summarizes revisions to this document. Revision 0 1 2 Date Jan. 2008 Mar. 2008 Mar. 2008 * Initial Release of Data Sheet * Corrected Table 7. Moisture Sensitivity Level Rating from 3 to 1, p. 3 * Corrected S - Parameter table frequency column label to read "MHz" versus "GHz", p. 17, 18 * Corrected Tape and Reel information from 330 mm to 12 mm, p. 1 * Corrected Figs. 24, 35, Single - Carrier W - CDMA Adjacent Channel Power Ratio versus Output Power y - axis (ACPR) unit of measure to dBc, p. 12, 16 Description MMG3006NT1 RF Device Data Freescale Semiconductor 23 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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"Typical" parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. (c) Freescale Semiconductor, Inc. 2008. All rights reserved. MMG3006NT1 Rev. 24 2, 3/2008 Document Number: MMG3006NT1 RF Device Data Freescale Semiconductor |
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